MGP14N60E Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MGP14N60E

Insulated Gate Bipolar Transistor

ON Semiconductor 

PACKAGE DIMENSIONS

MGP14N60E

Q

H

Z

B

4

1 23

F

T

–T–

SEATING

PLANE

C

S

A

U

K

L

R

V

J

G

D

N

CASE 221A–09

TO–220AB

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

A 0.570 0.620

B 0.380 0.405

C 0.160 0.190

D 0.025 0.035

F 0.142 0.147

G 0.095 0.105

H 0.110 0.155

J 0.018 0.025

K 0.500 0.562

L 0.045 0.060

N 0.190 0.210

Q 0.100 0.120

R 0.080 0.110

S 0.045 0.055

T 0.235 0.255

U 0.000 0.050

V 0.045 ---

Z --- 0.080

MILLIMETERS

MIN MAX

14.48 15.75

9.66 10.28

4.07 4.82

0.64 0.88

3.61 3.73

2.42 2.66

2.80 3.93

0.46 0.64

12.70 14.27

1.15 1.52

4.83 5.33

2.54 3.04

2.04 2.79

1.15 1.39

5.97 6.47

0.00 1.27

1.15 ---

--- 2.04

STYLE 9:

PIN 1.

2.

3.

4.

GATE

COLLECTOR

EMITTER

COLLECTOR

Motorola IGBT Device Data

5

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