MGP14N60E Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MGP14N60E

Insulated Gate Bipolar Transistor

ON Semiconductor 

MGP14N60E

0.8

TJ = 125°C

VDD = 360 V

VGE = 15 V

0.6

IC = 10 A

7.5 A

0.4

5.0 A

0.2

5

15

25

35

45

RG, GATE RESISTANCE (OHMS)

Figure 7. Turn–Off Losses versus

Gate Resistance

1.0

TJ = 125°C

0.8

VCC = 360 V

VGE = 15 V

RG = 20 W

0.6

0.4

0.2

0

0

5

10

15

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn–Off Losses versus

Collector Current

0.8

VCC = 360 V

VGE = 15 V

0.6 RG = 20 W

0.4

0.2

IC = 10 A

7.5 A

5.0 A

0

-50 -25

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Turn–Off Losses versus

Junction Temperature

100

10

TJ = 125°C

RGE = 20 W

VGE = 15 V

1

1

10

100

1000

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)

Figure 10. Reverse Biased Safe

Operating Area

4

Motorola IGBT Device Data

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