MGP14N60E Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MGP14N60E

Insulated Gate Bipolar Transistor

ON Semiconductor 

MGP14N60E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)

Temperature Coefficient (Positive)

Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 5.0 Adc)

(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 10 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 10 Adc,

VGE = 15 Vdc, L = 300 mH,

RG = 20 Ω)

Energy losses include “tail”

Turn–Off Switching Loss

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VCC = 360 Vdc, IC = 10 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

Turn–Off Switching Loss

Gate Charge

(VCC = 360 Vdc, IC = 10 Adc,

VGE = 15 Vdc)

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

Symbol

V(BR)CES

V(BR)ECS

ICES

IGES

VCE(on)

VGE(th)

gfe

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eoff

td(on)

tr

td(off)

tf

Eoff

QT

Q1

Q2

LE

Min

Typ

Max

Unit

600

—

—

870

Vdc

—

—

mV/°C

15

—

—

Vdc

µAdc

—

—

10

—

—

200

—

—

50

mAdc

Vdc

—

1.6

1.9

—

1.5

—

—

2.0

2.4

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

—

5.0

—

Mhos

—

1020

—

pF

—

104

—

—

17

—

—

38

—

ns

—

40

—

—

120

—

—

204

—

—

0.35

0.45

mJ

—

32

—

ns

—

30

—

—

208

—

—

212

—

—

0.63

—

mJ

—

57

—

nC

—

12

—

—

25

—

nH

—

7.5

—

2

Motorola IGBT Device Data

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