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IAM-92516-TR2

High Linearity GaAs FET Mixer

Avago Technologies 

IAM-92516

High Linearity GaAs FET Mixer

Data Sheet

Description

Avago Technologies’s IAM-92516 is a high linearity GaAs

FET Mixer using 0.5 μm enhancement mode pHEMT

technology. This device houses in Pb-free and Halogen

free 16 pins LPCC 3x3[2] plastic package. The IAM-92516

has built-in LO buffer amplifier which requires -3 dBm LO

power to deliver an input third order intercept point of

27 dBm. LO port is 50 ohm matched and can be driven

differential or single ended while IF port is 200 ohm

matched and fully differential. RF port requires external

matching network for optimum input return loss and

IIP3 performance.

RF and LO frequency range coverage from 400 to

3500 MHz and IF coverage is from DC to 300 MHz.

This mixer consumes 26 mA of current from a single

5V supply. Conversion loss is typically 6 dB and noise

figure is typically 12.5 dB. Excellent output power at 1 dB

compression of 9 dBm. LO to IF, LO to RF and RF to IF

isolation are greater than 30 dB.

The IAM-92516 is ideally suited for frequency up/

down conversion for base station radio card receiver

and transmitter, microwave link transceiver, MMDS,

modulation and demodulation for receiver and

transmitter and general purpose resistive FET mixer,

which require high linearity. All devices are 100% RF and

DC tested.

Pin Connections and Package Marking

Features

DC = 5V @ 26 mA (Typ.)

RF = 1.91 GHz, PinRF = -10 dBm;

LO = 1.7 GHz, PinLO = -3 dBm;

IF = 210 MHz unlesss otherwise specified

 Lead-free Option Available

 High Linearity: 27 dBm IIP3

 Conversion Loss: 6 dB typical

 Wide band operation: 400-3500 MHz RF & LO input

DC – 300 MHz IF output

 Fully differential or single ended operation

 High P1dB: 9 dBm typical

 Low current consumption: 5V@ 26 mA typical

 Excellent uniformity in product specifications

 Small LPCC 3.0 x 3.0 x 0.75 mm package

 MTTF > 300 years[1]

 MSL-1 and lead-free

 Tape-and-Reel packaging option available

Applications

 Frequency up/down converter for base station radio

card, microwave link transceiver, and MMDS

 Modulation and demodulation for receiver and

transmitter

 General purpose resistive FET mixer for other high

linearity applications

Notes:

1. Refer to reliability datasheet for detailed MTTF data.

2. Conform to JEDEC reference outline MO229 for DRP-N

Notes:

Package marking provides orientation andidentification

“M3” = Device Code

“X” = Month code indicates the month of manufacture

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model (Class A)

ESD Human Body Model (Class 1A)

Refer to Avago Application Note A004R:

Electrostatic Discharge Damage and Control.

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