2SJ530S Просмотр технического описания (PDF) - Renesas Electronics
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2SJ530S Datasheet PDF : 9 Pages
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2SJ530(L), 2SJ530(S)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
0.2 VGS = –4 V
–5 A
ID = –15 A –10 A
0.1
0
–40
–5 A, –10 A –15 A
–10 V
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
Pulse Test
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10 –20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
ID = –15 A
–20
–50 V
–4
–40
VDS
VGS
–8
–60
VDD = –50 V
–12
–25 V
–10 V
–80
–16
–100
0
8
16 24 32
Gate Charge Qg (nc)
–20
40
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
3
25°C
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
Coss
200
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
td(off)
100
tf
30
tr
td(on)
10
3
1
–0.1 –0.2
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
–0.5 –1 –2 –5 –10 –20
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 8
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