TSAL6200 Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

TSAL6200

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Vishay Semiconductors 

www.vishay.com

0° 10° 20°

30°

40°

1.0

0.9

50°

0.8

60°

0.7

70°

80°

14329

0.6 0.4 0.2 0

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

A

C

TSAL6200

Vishay Semiconductors

R 2.49 (sphere)

0.6

+

-

0.2

0.1

Area not plane

Ø 5 ± 0.15

0.5

+ 0.15

- 0.05

Drawing-No.: 6.544-5259.06-4

Issue: 6; 19.05.09

19257

2.54 nom.

0.5

+ 0.15

- 0.05

technical drawings

according to DIN

specifications

Rev. 2.4, 13-Mar-14

4

Document Number: 81010

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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