TSAL6200 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
TSAL6200 Datasheet PDF : 5 Pages
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www.vishay.com
TSAL6200
Vishay Semiconductors
180
160
140
120
100
80 RthJA = 230 K/W
60
40
20
0
0
21211
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21212
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 1 mA
VF
VF
TKVF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 20 mA
IR
Cj
Ie
40
Ie
340
φe
TKφe
ϕ
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
λp
Δλ
TKλp
tr
tf
TYP.
1.35
2.2
-1.8
40
72
600
40
-0.6
± 17
940
30
0.2
15
15
MAX.
1.6
3
10
200
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 2.4, 13-Mar-14
2
Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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