STPS2L40U(2003) Просмотр технического описания (PDF) - STMicroelectronics
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STPS2L40U Datasheet PDF : 5 Pages
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STPS2L40U
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
12
10
8
6
4
IM
2
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=50°C
Ta=100°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-2
1E-1
tp(s)
1E+0 1E+1
T
δ=tp/T
1E+2
tp
1E+3
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
1E+2
1E+1
Tj=125°C
1E+0
1E-1
1E-2
1E-3
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
C(pF)
1000
100
10
1
F=1MHz
Tj=25°C
VR(V)
10
100
3/5
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