BAS81 Просмотр технического описания (PDF) - Vishay Semiconductors
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BAS81 Datasheet PDF : 4 Pages
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www.vishay.com
BAS81, BAS82, BAS83
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
IF = 0.1 mA
VF
Forward voltage
IF = 1 mA
VF
IF = 15 mA
VF
Reserve current
VR = VRmax.
IR
Diode capacitance
VR = 1 V, f = 1 MHz
CD
TYP.
MAX.
330
410
1000
200
1.6
UNIT
mV
mV
mV
nA
pF
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
14
12
RthJA = 540 K/W
10
V = 60 V
R
8
6
PPRR - Limmiittaat t11000%%VRVR
4
PR - Limit at 80 % VR
2
0
25
50
75
100
125
150
15794
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
Tj = 125 °C
10
Tj = 25 °C
1
0.1
0.01
0
0.5
1
1.5
2.0
15796
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1000
100
VR = VRRM
10
1
0.1
25
50
75
100
125
150
15795
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
2.0
1.8
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
15797
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.0, 02-Jun-17
2
Document Number: 85509
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