2SK3564 Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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2SK3564 Datasheet PDF : 6 Pages
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SEMICONDUCTOR
Fig.5 Forward transconductance characteristics
10
TC = -55°C
25°C
1
100°C
0.1
0.01
0.01
Common source
VDS=20V
Pulse test
0.1
1
10
Drain current, lD (A)
2SK3564 Series RRooHHSS
Nell High Power Products
Fig.6 On-Resistance variation vs.
Drain current and gate voltage
10
Common source
TC=25°C
Pulse test
5
3
VGS=10V
1
0.01
0.1
1
10
Drain current, lD (A)
Fig.7 On-Resistance variation vs.
case temperature
20
Common source
Pulse test
16
VGS=10V
12
ID=3A
8
1.5A
4
0.8A
0
-80 -40
0
40
80 120 160
Case temperature, TC (°C)
Fig.8 Drain reverse current vs.
Drain-Source voltage
10
Common source
5
TC=25°C
Pulse test
3
1
0.5
0.3
0.1
0
10V
3V
VGS=0, -1V
-0.4
-0.8
-1.2
-1.6
Drain-source voltage, VDS (V)
Fig.9 Capacitance characteristics
10000
1000
Ciss
100
Coss
Common source
10
VGS=0V
Pulse test
f=1 MHZ
TC=25°C
1
0.1
1
Crss
3 5 10 30 50 100
Drain-source voltage, VDS (V)
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Page 4 of 6
Fig.10 Gate threshold voltage vs.
case temperature
5
Common source
VDS=10V
4
lD=1 mA
Pulse test
3
2
1
0
-80 -40
0
40 80 120 180
Case temperature, TC (°C)
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