2SK3564 Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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2SK3564 Datasheet PDF : 6 Pages
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SEMICONDUCTOR
2SK3564 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Min.
Typ.
Max.
3.1
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
STATIC
V(BR)DSS
▲ ▲ V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
RDS(ON)
VGS(TH)
gfS
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
DYNAMIC
CISS
COSS
Input capacitance
Output capacitance
CRSS
td(ON)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td(OFF)
Turn-off delay time
tf
Fall time
QG
Total gate charge
QGS
Gate to source charge
QGD
Gate to drain charge (Miller charge)
ID = 10mA, VGS = 0V
ID = 250µA, VDS = VGS
VDS=900V, VGS=0V TC = 25°C
VDS=720V, VGS=0V TC=125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
lD = 1.5A, VGS = 10V
VGS=VDS=10V, ID=1mA
VDS=20V, ID=1.5A
VDS = 25V, VGS = 0V, f =1MHz
VDD = 200V, VGS = 10V
ID = 1.5A, RG=50Ω, RD = 133Ω,
(Note 1,2)
VDD = 400V, VGS = 10V,
ID =3A (Note 1,2)
900
2.0
0.65
Typ.
0.99
3.70
2.6
700
75
15
20
60
35
125
17
10
7
Max. UNIT
50.0
500
10
-10
4.30
4.0
V
V/ºC
μA
μA
Ω
V
S
pF
ns
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 3A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
1.9
V
3
ISM
Pulsed source current
G
(Gate)
A
9
trr
Reverse recovery time
Qrr
Reverse recovery charge
S (Source)
ISD=3A, VGS = 0V,
dIF/dt = 100A/µs
850
ns
4.7
μC
Note: 1. Pulse test: Pulse width ≤ 10μs, duty cycle ≤ 1%.
2. Essentially independent of operating temperature.
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