BUZ45 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BUZ45

N-Channel Enhancement-Mode Power Field-Effect Transistors

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Line.

BUZ45

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

N-Channel Enhancement-Mode

Power Field-Effect Transistors

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a

metal envelope.

This device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and DC/AC converters,

and in general purpose switching

applications.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VDS

ID

Plot

RDS(ON)

Drain-source voltage

Drain current (d.c.)

Total power dissipation

Drain-source on-state resistance

MAX.

500

9,6

125

0,6

UNIT

V

A

W

n

MECHANICAL DATA

Dimensions in mm

Net mass: 12 g

Pinning:

1 = Gate

2 = Drain

3 • Source

"8,3*

4,2

19,5

1,55

max

—10,9-*

1,6-* U-11,8-*-

Fig.l TO3; drain connected to mounting base.

Notes

1, Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDg)

to prevent damage to MOSgate oxide.

2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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