MC100EP11(2003) Просмотр технического описания (PDF) - ON Semiconductor
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MC100EP11 Datasheet PDF : 8 Pages
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MC10EP11, MC100EP11
AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 21)
−40°C
25°C
85°C
Symbol
Characteristic
fmax
Maximum Frequency
(See Figure 2)
Min Typ Max Min Typ Max Min Typ Max Unit
>3
>3
>3
GHz
tPLH,
tPHL
Propagation Delay to
Output Differential
ps
CLK to Q, Q 140 200 250 160 220 270 180 240 300
tSKEW
Within Device Skew Q0, Q1 (Note 22)
Device−to−Device Skew
10
15
110
15
20
110
20
25 ps
120
tJITTER Random Clock Jitter (RMS)
(See Figure 2)
0.2 < 1
0.2 < 1
0.2 < 1 ps
VINPP
Input Voltage Swing Sensitivity
(Differential Configuration)
150 800 1200 150 800 1200 150 800 1200 mV
tr
Output Rise/Fall Times
Q, Q 70 120 170 80 130 180 90 150 200 ps
tf
(20% − 80%) @ 1.0 GHz
21. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V.
22. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
are measured from the cross point of the inputs to the cross point of the outputs.
900
9
800
8
700
7
600
6
500
5
400
4
123000ÉÉ0000 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ123ÉÉÉÉ
0
1000
2000
3000
INPUT FREQUENCY (MHz)
Figure 2. Output Voltage Amplitude (VOUTPP) RMS Jitter vs. Input Clock Frequency at Ambient Temperature
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