BCW65ALT1G(2016) Просмотр технического описания (PDF) - ON Semiconductor
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BCW65ALT1G Datasheet PDF : 3 Pages
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BCW65ALT1G, BCW65CLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
32
−
−
Vdc
V(BR)CES
60
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
ICES
IEBO
−
−
20
nAdc
−
−
20
mAdc
−
−
20
nAdc
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
BCW65ALT1
hFE
BCW65CLT1
hFE
VCE(sat)
VBE(sat)
−
35
−
−
75
−
−
100
−
250
35
−
−
−
80
−
−
180
−
−
250
−
630
100
−
−
Vdc
−
0.7
−
−
0.3
−
Vdc
−
−
2.0
Current −Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
fT
Cobo
Cibo
NF
100
−
−
−
−
−
−
−
−
MHz
12
pF
80
pF
10
dB
Turn−On Time
(IB1 = IB2 = 15 mAdc)
ton
−
−
100
ns
Turn−Off Time
(IC = 150 mAdc, RL = 150 W)
toff
−
−
400
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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