MCD26-12IO1B(2016) Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
MCD26-12IO1B Datasheet PDF : 6 Pages
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MCD26-12io1B
Thyristor
800
50 HZ, 80% VRRM
600
ITSM
400
[A]
200
TVJ = 45°C
TVJ = 125°C
104
VR = 0 V
I2t
103
[A2s]
TVJ = 45°C
TVJ = 125°C
60
50
40
ITAVM
30
[A]
20
10
DC
180° sin
120°
60°
30°
0
10-3
10-2
10-1
100
101
t [s]
Fig. 1 Surge overload current
ITSM: Crest value, t: duration
102
1
2
3
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
0
0
50
100
150
TC [°C]
Fig. 3 Max. forward current
at case temperature
80
60
PT
40
[W]
20
DC
180° sin
120°
60°
30°
RthJA
[KW]
1.5
2
2.5
3
4
5
6
8
0
0
10
20
30
40
50
0
50
100
150
ITAVM [A]
TA [°C]
Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
56
1
4
IGD, TVJ = 125°C
0.1
100
101
102
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
103
104
IG [mA]
Fig. 5 Gate trigger charact.
400
300
Ptot
200
[W]
100
Circuit
B6
3x MCC26 or
3x MCD26
RthJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
1000
100
tgd
[µs]
10
TVJ = 25°C
typ. Limit
0
0
20
40
60
80
0
IdAVM [A]
1
50
100
150
10
TA [°C]
100
1000
IG [mA]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
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