NDS8947 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

NDS8947

Dual P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = -250 µA

VDS = -24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS= 0 V

VDS = VGS, ID = -250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = -10 V, ID = -4.0 A

ID(on)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = -4.5 V, ID = -3.3 A

VGS = -10 V, VDS = -5 V

VGS = -4.5 V, VDS = -5 V

VDS = -10 V, ID = -4.0 A

VDS = -15 V, VGS = 0 V,

f = 1.0 MHz

VDD = -10 V, ID = -1 A,

VGEN = -10 V, RGEN = 6 Ω

VDS = -10 V,

ID = -4.0 A, VGS = -10 V

Min Typ Max Units

-30

TJ = 55°C

V

-1

µA

-10

µA

100 nA

-100 nA

-1 -1.6 -2.8

V

TJ = 125°C -0.7 -1.2 -2.2

0.052 0.065 Ω

TJ = 125°C

0.075 0.13

0.085 0.1

-15

A

-5

7

S

690

pF

430

pF

160

pF

9

20

ns

20

30

ns

40

50

ns

19

40

ns

21

30

nC

3.1

nC

5.1

nC

NDS8947.SAM

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