A1804 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

A1804

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCE(sat) Collector-emitter saturation voltage IC=-6A;IB=-0.6 A

VBE

Base-emitter voltage

IC=-4A ; VCE=-5V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=-120V; IE=0

VEB=-5V; IC=0

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

‹ hFE classifications

R

O

55-110

80-160

Product Specification

2SA1804

MIN TYP. MAX UNIT

-120

V

-2.0

V

-1.5

V

-5

μA

-5

μA

55

160

35

30

MHz

420

pF

2

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