2N6102 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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2N6102 Datasheet PDF : 2 Pages
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2N6102/2N6103
2N6102/2N6103
Pb
Pb Free Plating Product
75Watt Silicon Epitaxial Planar PNP Power Transistors
DESCRIPTION
·With TO-220C package
·2N6102 type with short pin/leg
·For use in general-purpose amplifier
and switching applications
Collector
Base
Emitter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
E
C
B
Fig.1 simplified outline (TO-220C) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
PT
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
45
45
8
16
75
150
-65~150
UNIT
V
V
V
A
W
℃
℃
MAX
1.67
UNIT
℃/W
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
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