BCW89 Просмотр технического описания (PDF) - Continental Device India Limited
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BCW89 Datasheet PDF : 4 Pages
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BCW89
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
–IC = 2 mA
Emitter–base voltage (open collector)
Collector current (d.c.)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; –VCB = 20 V
IE = 0; –VCB = 20 V; Tj = 100 °C
Base–emitter voltage
–IC = 2 mA; –VCE = 5 V; Tj = 25 °C
Saturation voltages
–IC = 10 mA; –lB = 0,5 mA
–IC = 50 mA; –lB = 2,5 mA
D.C. current gain
–IC = 10 mA; –VCE = 5 V
–IC = 2 mA; –VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; –VCB = 10 V
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
Noise figure at RS = 2 kW
–IC = 200mA; –VCE = 5 V
f = 1 kHz; B = 200 Hz
–VCB0
–VCES
–VCE0
–VEB0
–IC
–ICM
Ptot
Tstg
Tj
max. 80 V
max. 60 V
max. 60 V
max. 5 V
max. 100 mA
max. 200 mA
max. 250 mW
–55 to +150 °C
max. 150 ° C
Rth j–a = 500 K/W
–ICB0
<
100 nA
–ICB0
<
10 mA
–VBE
600 to 750 mV
–VCEsat typ. 80 mV
<
300 mV
–VBEsat typ. 720 mV
–VCEsat typ. 150 mV
–VBEsat typ. 810 mV
hFE
typ. 90
hFE
>
120
<
260
Cc
typ. 4,5 pF
fT
typ. 150 MHz
F
<
10 dB
Continental Device India Limited
Data Sheet
Page 2 of 4
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