TIP35C(2013) Просмотр технического описания (PDF) - Unisonic Technologies
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TIP35C Datasheet PDF : 4 Pages
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TIP35C
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector-Base Voltage
12
10
8
6
4
2
0
0 100 200 300 400 500
Collector-Base Voltage, VCBO (V)
Emitter Current vs.
Emitter-Base Voltage
12
10
8
6
4
2
00
4
8
12 16 20
Emitter-Base Voltage, VEBO (V)
Collector Current vs.
Collector-Emitter Voltage
18
VCE=4V, IC=15A
15
12
IB=131.5mA
9
6
3
00 1
234
56
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector Current vs.
Collector-Emitter Voltage
60
50
40
30
20
10
0 0 30 60 90 120 150 180
Collector-Emitter Voltage, VCEO (V)
Collector Current vs.
Collector-Emitter Voltage
0.3
VCE=5V, IC=0.2A
0.25
IB=1.46mA
0.2
0.15
0.1
0.05
00 1
234
56
Collector-Emitter Voltage, VCE (V)
3 of 4
QW-R214-013.C
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