TIP35C(2013) Просмотр технического описания (PDF) - Unisonic Technologies
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TIP35C Datasheet PDF : 4 Pages
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TIP35C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
VCBO
VCEO
100
V
100
V
Emitter-Base Voltage (IC = 0)
Collector Current
VEBO
IC
5
V
25
A
Collector Peak Current
Base Current
ICM
50
A
IB
5
A
Total Dissipation (TC =25 °C)
Junction Temperature
PD
125
W
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case
SYMBOL
MIN
TYP
θJC
ELECTRICAL CHARACTERISTICS (Tc =25°C, unless otherwise specified)
MAX
1
UNIT
°C/W
PARAMETER
Collector Cut-off Current (IE = 0)
Emitter Cut-off Current (IC = 0)
Collector-Emitter Sustaining Voltage (IB = 0)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
CLASSIFICATION OF hFE1
RANK
RANGE
SYMBOL
ICBO
IEBO
V(BR)CEO
VCE(SAT)
VBE(ON)
hFE1
hFE2
fT
TEST CONDITIONS
VCB = 100 V
VEB = 5 V
IC = 50 mA
IB = 1.5 A, IC = 15 A
IB = 5 A, IC = 25 A
VCE = 5 V, IC = 5 A
VCE = 5 V, IC = 1.5 A
VCE = 4 V, IC = 15 A
VCE = 5 V, IC = 1 A
R
55~110
MIN TYP MAX UNIT
10 μA
10 μA
100
V
1.8 V
4
V
1.5 V
55
160
15
3
MHz
O
80~160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-013.C
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