HFA3134 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
HFA3134 Datasheet PDF : 5 Pages
| |||
HFA3134, HFA3135
Electrical Specifications TA = 25°C (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
NF
f = 900MHz, IC = -10mA,
B
-
5.2
-
dB
-1V VCE -5V, ZS = 50
f = 900MHz, IC = -1mA,
B
-
4.6
-
dB
-1V VCE -5V, ZS = 50
Current Gain-Bandwidth Product
fT
IC = -10mA, VCE = -5V
B
-
7
-
GHz
Power Gain-Bandwidth Product
fMAX
IC = -10mA, VCE = -5V
B
-
TBD
-
GHz
Base to Emitter Capacitance
VBE = 0.5V
B
-
550
-
fF
Collector to Base Capacitance
VCB = -3V
B
-
400
-
fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring VEBO can degrade the transistor hFE and hFE match.
5. See Typical Performance Curves for more information.
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
20
18
16
14
12
10
8
Q1
6
Q2
4
Q1
Q2
2
Q1
Q2
Q1
Q2
IB = 200A
IB = 160A
IB = 120A
IB = 80A
Q1 IB = 40A
Q2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
100m
10m
1m
100
10
1
100n
10n
1n
100p
10p
0.4
Q1
Q2
Q1
Q2
IC
IB
0.5
0.6
0.7
0.8
0.9
1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
BASE TO EMITTER VOLTAGE
FN4445 Rev 2.00
August 12, 2005
Page 4 of 5
Share Link: 