E30A23VS Просмотр технического описания (PDF) - KEC
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E30A23VS Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
·Average Forward Current : IO=30A.
·Zener Voltage : 23V(Typ.)
POLARITY
E30A23VS E30A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse
Surge Current
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
IF(AV)
IFSM
RATING
30
300(50Hz)
UNIT
A
A
IRSM
30
A
VRSM
VRM
Tj
Tstg
17
V
17
V
-40～190
℃
-40～150
℃
E30A23VS, E30A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
VFM
Zener Voltage
VZ
Repetitive Peak Reverse Current
Transient Thermal Resistance
Reverse Leakage Current
Under High Temperature
IRRM
ΔVF
HIR
Reverse Recovery Time
trr
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=VRM
IFM=100A
Ta=150℃, VR=VRM
IF=100mA, -IR=100mA,
90% Recovery Point
DC total junction to case
MIN.
-
20
-
-
-
TYP.
-
23
-
-
-
MAX.
1.2
26
10
100
2.5
UNIT
V
V
μA
mV
mA
-
-
1.5
μS
-
-
1.0
℃/W
2007. 6. 26
Revision No : 1
1/2
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