BD245B Просмотр технического описания (PDF) - Comset Semiconductors
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BD245B Datasheet PDF : 3 Pages
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BD245 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCE = 55 V , VBE = 0 BD245
ICES
Collector- Emitter
Cut-off Current
VCE = 70 V , VBE = 0 BD245A -
VCE = 90 V , VBE = 0 BD245B
- 0.4 mA
VCE = 115 V , VBE = 0 BD245C
ICEO
Collector Cut-off
Current
VCE = 30 V , IB = 0
VCE = 60 V , IB = 0
BD245
BD245A
BD245B
-
BD245C
- 0.7 mA
IEBO
Emitter Cut-off Current VE B = 5 V , IC = 0
-
-
1 mA
BD245 45 -
-
VCEO
Collector- Emitter
Breakdown Voltage
(*)
IC = 30 mA, IB = 0
BD245A 60 -
BD245B 80 -
-
-
V
BD245C 100 -
-
hFE
VCE(SAT)
VBE
hfe
|hfe|
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Voltage(*)
Small Signal forward
Current Transfer ratio
Small Signal forward
Current Transfer ratio
VCE = 4 V, IC = 1 A
VCE = 4 V, I C= 3 A
VCE = 4 V, IC = 10 A
IC = 3 A, IB = 300 mA
IC = 10 A, IB = 2.5 A
VCE = 4 V, IC = 3 A
VCE = 4 V, IC = 10 A
VCE = 10 V, IC = 500 mA
f = 1MHz
VCE = 10 V, IC = 500 m
Af = 1MHz
40 -
-
20 -
-
-
4
-
-
-
-
-
-
1
4
V
-
-
-
-
1.6
3
V
20 -
-
-
3
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE
Symbol
Ratings
ton
Turn-on Time
toff
Turn-off Time
Test Condition(s)
IC = 1 A , IB(on) = 100 mA ,
IB(off) = -100 mA
VBE(off) = -3.7 V , RL = 20 Ω
tp = 20 µs
dc < 2%
Min Typ Max Unit
- 0.3 -
µs
-
1
-
22/10/2012
COMSET SEMICONDUCTORS
2/3
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