BCW30LT1 Просмотр технического описания (PDF) - ON Semiconductor
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BCW30LT1 Datasheet PDF : 7 Pages
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BCW30LT1
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
TYPICAL DYNAMIC CHARACTERISTICS
1000
VCC = 3.0 V
700
IC/IB = 10
500
TJ = 25°C
300
200
VCC = − 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
100
70
tr
50
tf
td @ VBE(off) = 0.5 V
30
20
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time
50 70 100
10
−1.0
− 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn−Off Time
− 50 − 70 −100
500
TJ = 25°C
300
VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 13. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0
Cob
1.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
VCE = −10 Vdc
10
f = 1.0 kHz
7.0
hfe ≈ 300
TA = 25°C
5.0
@ IC = −1.0 mA
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30
hfe ≈ 300
@ IC = 1.0 mA
20
10
7.0
5.0
3.0
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
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