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M48T59-70MH1(2008) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
M48T59-70MH1
(Rev.:2008)
STMICROELECTRONICS
STMicroelectronics STMICROELECTRONICS
M48T59-70MH1 Datasheet PDF : 32 Pages
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M48T59
M48T59Y, M48T59V
5.0 or 3.3 V, 64 Kbit (8 Kbit x 8) TIMEKEEPER® SRAM
Not For New Design
Features
Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, and battery
Frequency test output for real-time clock
software calibration
Automatic power-fail chip deselect and WRITE
protection
28
WRITE protect voltages
(VPFD = Power-fail deselect voltage):
t(s) – M48T59: VCC = 4.75 to 5.5 V
4.5 V VPFD 4.75 V
uc – M48T59Y: VCC = 4.5 to 5.5 V
d 4.2 V VPFD 4.5 V
ro – M48T59V(a): VCC = 3.0 to 3.6 V
P 2.7 V VPFD 3.0 V
te Self-contained battery and crystal in the
le CAPHAT™ DIP package
o Packaging includes a 28-lead SOIC and
bs SNAPHAT® top (to be ordered separately)
O SOIC package provides direct connection for a
- SNAPHAT top which contains the battery and
t(s) crystal
Microprocessor power-on reset (valid even
uc during battery back-up mode)
rod Programmable alarm output active in the
battery back-up mode
P Battery low flag
lete RoHS compliant
Obso– Lead-free second level interconnect
1
PCDIP28 (PC)
battery/crystal
CAPHAT
SNAPHAT (SH)
battery/crystal
28
1
SOH28 (MH)
a. Contact local ST sales office for availability of 3.3 V
version.
April 2008
Rev 7
This is information on a product still in production but not recommended for new designs.
1/32
www.st.com
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