MJD2955 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

MJD2955

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistors

INCHANGE Semiconductor

MJD2955

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ;IB= -3.3A

VBE(on) Base-Emitter On Voltage

IC= -4A ; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -30V; IB= 0

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

hFE-2

DC Current Gain

IC= -10A ; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -10V

MIN MAX UNIT

-60

V

-1.0

V

-8.0

V

-1.8

V

-50

uA

-0.02

mA

-0.5

mA

20

100

5

2.0

MHz

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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