MJD2955T4(1998) Просмотр технического описания (PDF) - STMicroelectronics
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MJD2955T4 Datasheet PDF : 6 Pages
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MJD2955
®
MJD3055
COMPLEMENTARY SILICON POWER TRANSISTORS
s STM PREFERRED SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICAL SIMILAR TO MJE2955 AND
MJE3055
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION
The MJD2955 and MJD3055 form
complementary PNP-NPN pairs. They are
manufactured using Epitaxial Base technology for
cost-effective performance.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
V CBO
V CEO
V EBO
IC
IB
Ptot
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Dissipation at Tc = 25 oC
June 1998
NPN
PNP
Value
MJD3055
MJD2955
60
70
5
10
6
20
Uni t
V
V
V
A
A
W
1/6
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