BD137 Просмотр технического описания (PDF) - Nanjing International Group Co

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производитель

BD137

TO-126 Plastic-Encapsulate Transistors

Nanjing International Group Co 

DONGGUAN NANJING ELECTRONICS LTD.,

TO-126 Plastic-Encapsulate Transistors

BD135/BD137/BD139 TRANSISTOR (NPN)

FEATURES

·High Current(1.5A)

·Low Voltage(80V)

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

123

MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

Symbol

Parameter

BD135

Value

BD137

BD139

VCBO

Collector-Base Voltage

45

60

80

VCEO

Collector-Emitter Voltage

45

60

80

VEBO

Emitter-Base Voltage

5

IC

Collector Current -Continuous

1.5

PC

Collector power dissipation

1.25

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS(Tamb=25 ℃unless otherwise specified)

Units

V

V

V

A

W

℃

℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

*PULSE TEST

CLASSIFICATION OF hFE(2)

Rank

Symbol

Test conditions

V(BR)CBO Ic=100µA,IE=0

BD135

BD137

BD139

BD135

V(BR)CEO* Ic=30mA,IB=0

BD137

BD139

V(BR)EBO IE=100µA,IC=0

ICBO

VCB=30V,IE=0

IEBO

VEB=5V,IC=0

hFE(1) VCE=2V,IC=5mA

hFE(2) VCE=2V,IC=150mA

hFE(3) VCE=2V,IC=500mA

VCE(sat) IC=500mA,IB=50mA

VBE VCE=2V,IC=500mA

MIN TYP MAX UNIT

45

60

V

80

45

60

V

80

5

V

0.1 µA

10 µA

25

40

250

25

0.5

V

1

V

Range

40-100

100-200

200-300

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