BU208D Просмотр технического описания (PDF) - SavantIC Semiconductor

Номер в каталоге

Компоненты Описание

производитель

BU208D

Silicon NPN Power Transistor

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU208D

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS Collector-emitter sustaining voltage IC=0.1A; IB=0;

VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5 A;IB=2 A

VCE=1500V;VBE=0

Tj=125

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

VF

Diode forward voltage

IF=4A

fT

Transition frequency

IC=0.1A ; VCE=5V

ts

Storage time

tf

Fall time

IC=4.5A;IB=1.8A;VCC=140V

LC=0.9Mh;LB=3µH

700

V

1.0

V

1.3

V

1.0

2.0

mA

300

mA

8

2.0

V

7

MHz

7

µs

0.55

µs

2

Share Link: