BCY58 Просмотр технического описания (PDF) - Comset Semiconductors
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BCY58 Datasheet PDF : 4 Pages
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NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Ratings
Test Condition(s)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
VCB =45 V, VBE =0V
VCB =32 V, VB =0V
VCB =45 V
VBE =0V,Tamb =150°C
VCB =32 V
VBE =0V,Tamb =150°C
VBE =5.0 V, IC =0
Collector Emitter Breakdown
Voltage
IC =2 mA, IB =0
Emitter Base Breakdown
Voltage
IE =1µA, IC =0
Collector-Emitter saturation
Voltage
IC =10 mA, IB =0.25 mA
IC =100 mA, IB =2.5 mA
Base-Emitter Saturation
Voltage
IC =10 mA, IB =0.25 mA
IC =100 mA, IB =2.5 mA
Base-Emitter Voltage
IC =10 µA, VCE =5 V
IC =20 µA, VCE =VCE max
Tj =100°C
IC =2 mA, VCE =5 V
IC =10 mA, VCE =1 V
IC =100 mA, VCE =1 V
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Min Typ Mx Unit
-
-
10 nA
-
-
10 µA
-
-
45 -
32 -
7
-
10 nA
-
-
V
-
V
- 0.12 0.25
- 04 08
V
0.6 0.7 0.85
0.7 0.85 1.2
- 0.5
-
0.2 -
-
0.55 -
0.7
V
- 0.7
-
- 0.76 -
BCY59VII BCY59VIII BCY59IX BCY59X
BCY58VII BCY58VIII BCY58IX BCY58X
IC =10 µA, VCE =5 V
-
Typ.20
>20
Typ.95
>40
Typ.190
>60
Typ.300
hFE
DC Current Gain IC =10 µA, VCE =5 V
>120
<220
>180
<310
>250
<460
>380
<630
IC =10 mA, VCE =1 V
>80
>120
>160
>240
-
<400
<630
<1000
IC =100 mA, VCE =1 V
>40
>45
>60
>60
hfe
Small-Signal
IC =2 mA, VCE =5 V,
>125
>175
>250
>350
Current Gain
f = 1kHz
<250
<350
<500
<700
COMSET SEMICONDUCTORS
2/4
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