BCY58(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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BCY58 Datasheet PDF : 4 Pages
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NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
fT
Transition
frequency
IC =10 mA, VCE =5 V
f = 100MHz
BCY59
BCY58
150
-
- MHz
F
Noise figure ,
RS=2kΩ
IC =200 µA, VCE =5 V
f = 1kHz, B =200Hz
BCY59
BCY58
-
2
6
db
td
Delay time
BCY59
BCY58
-
35
-
tr
Rise time
BCY59
BCY58
-
50
-
ton
ts
Turn on time
Storage time
IC=10 mA , IB =1 mA
-IBM =1 mA, VBB=3.6 V
R1= R2 = 5kΩ
RL= 990 Ω
BCY59
BCY58
BCY59
BCY58
-
-
85 150
ns
400 -
tf
Fall time
BCY59
BCY58
-
80
-
toff
Turn off time
BCY59
BCY58
-
480 800
td
Delay time
BCY59
BCY58
-
5
-
tr
Rise time
BCY59
BCY58
-
50
-
ton
ts
Turn on time
Storage time
IC=100 mA , IB =10 mA
-IBM =10 mA, VBB =5 V
R1 = 500Ω , R1 = 700Ω
RL= 990 Ω
BCY59
BCY58
BCY59
BCY58
-
-
55 150
ns
250 -
tf
Fall time
BCY59
BCY58
-
200
-
toff
Turn off time
BCY59
BCY58
-
450 800
CC
Collector
capacitance
IE = Ie = 0 ,VCB =10 V
f = 1MHz
BCY59
BCY58
-
-
5
pF
CE
Emitter capacitance
IC = Ic = 0 ,VEB =0.5 V
f = 1MHz
BCY59
BCY58
-
-
15 pF
18/10/2012
COMSET SEMICONDUCTORS
3/4
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