BCY58(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
BCY58 Datasheet PDF : 4 Pages
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NPN BCY58 – BCY59
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifie
Symbol
Ratings
Test Condition(s)
ICES
ICES
IEBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
VBE
Collector Cutoff
Current
VCB =45 V
VBE =0V
VCB =32 V
VB =0V
BCY59
BCY58
Collector Cutoff
Current
Emitter Cutoff
Current
VCB =45 V
VBE =0V,Tamb =150°C
BCY59
VCB =32 V, VBE =0
Tamb =150°C
BCY58
VBE =5.0 VIC =0
BCY59
BCY58
Collector Emitter
Breakdown Voltage
IC =2 mA, IB =0
BCY59
BCY58
Emitter Base
Breakdown Voltage
IE =1µA, IC =0
BCY59
BCY58
Collector-Emitter
saturation Voltage
IC =10 mA
IB =0.25 mA
IC =100 mA
IB =2.5 mA
BCY59
BCY58
BCY59
BCY58
Base-Emitter
Saturation Voltage
IC =10 mA
IB =0.25 mA
IC =100 mA
IB =2.5 mA
BCY59
BCY58
BCY59
BCY58
IC =10 µA, VCE =5 V
BCY59
BCY58
VCE =VCE max
BCY59
IC =20 µA, Tj =100°C BCY58
Base-Emitter Voltage IC =2 mA, VCE =5 V
BCY59
BCY58
IC =10 mA, VCE =1 V
BCY59
BCY58
IC =100 mA, VCE =1 V
BCY59
BCY58
Min Typ Max Unit
-
-
10 nA
-
-
10 µA
-
-
10 nA
45
-
32
-
-
-
V
7
-
-
V
- 0.12 0.25
-
04 08
V
0.6 0.7 0.85
0.7 0.85 1.2
- 0.5 -
0.2 -
-
0.55 - 0.7 V
- 0.7 -
- 0.76 -
Symbol
Ratings
hFE
DC Current Gain
hfe
Small-Signal
Current Gain
18/10/2012
Test
Condition(s)
IC =10 µA, VCE =5 V
IC =10 µA, VCE =5 V
IC =10 mA, VCE =1 V
IC =100 mA, VCE =1V
IC =2 mA, VCE =5 V,
f = 1kHz
BCY59VII
BCY58VII
-
Typ.20
>120
<220
>80
-
>40
>125
<250
COMSET SEMICONDUCTORS
BCY59VIII
BCY58VIII
>20
Typ.95
>180
<310
>120
<400
>45
>175
<350
BCY59IX BCY59X
BCY58IX BCY58X
>40
>60
Typ.190 Typ.300
>250
<460
>380
<630
>160
>240
<630 <1000
>60
>60
>250
>350
<500
<700
2/4
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