BCY58(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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BCY58 Datasheet PDF : 4 Pages
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NPN BCY58 – BCY59
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the
collector connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCES
VEBO
IC
IB
PD
PD
TJ
TStg
Collector-Emitter Voltage(1)
Collector-Emitter Voltage (VBE =0)
Emitter-Base Voltage
Collector Current
Base Current
Total Power
Dissipation
Total Power
Dissipation
@ Tamb = 45°
@ Tcase= 45°
Junction Temperature
Storage Temperature range
(1) Applicable up to IC = 500mA
THERMAL CHARACTERISTICS
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
BCY58
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
45
32
45
32
7
7
200
50
0.39
1
200
-65 to +150
Unit
V
V
V
mA
mA
mW
Watts
°C
°C
Value
450
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
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