FDD2512 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD2512 Datasheet PDF : 5 Pages
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Typical Characteristics
8
VGS =10V
6.0V
6
4
4.5V
4.0V
2
0
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.6
ID = 2.2A
2.2 VGS = 10V
1.8
1.4
1
0.6
0.2
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
8
VDS = 25V
6
TA = -55oC
25oC
125oC
4
2
0
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.4
1.3
VGS = 4.0V
1.2
1.1
4.5V
5.0V
6.0V
10V
1
0.9
0
1
2
3
4
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
ID = 1A
0.7
0.6
TA = 125oC
0.5
0.4
0.3
TA = 25oC
0.2
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
TA = 125oC
0.01
0.001
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD2512 Rev B2(W)
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