FDD2512 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD2512 Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse,VDD = 75 V, ID = 2.2A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
ID = 250 µA, Referenced to 25°C
VDS = 120 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 2.2 A
VGS = 6 V, ID = 2.0 A
VGS = 10 V, ID = 2.2 A,TJ = 125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 2.2 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 75 V,
f = 1.0 MHz
V GS = 0 V,
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
VDD = 75 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
VDS = 75 V,
VGS = 10 V
ID = 2.2 A,
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A (Note 2)
Voltage
Min
150
2
5
Typ
147
2.6
–5.6
307
322
606
6.5
344
22
9
6.5
3.5
22
4
8
1.5
2.3
0.8
Max Units
90
mJ
2.2
A
V
mV/°C
1
µA
100 nA
–100 nA
4
V
mV/°C
420 mΩ
470
870
A
S
pF
pF
pF
13
ns
7
ns
33
ns
8
ns
11
nC
nC
nC
3.2
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
RDS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD2512 Rev B2(W)
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