LM79MXX Просмотр технического описания (PDF) - Fairchild Semiconductor
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LM79MXX Datasheet PDF : 10 Pages
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Electrical Characteristics (KA79M12R)
Refer to test circuit, 0°C ≤ TJ ≤ +125°C, lO = 350 mA, VI = -19 V, CI = 0.33 μF, CO = 0.1 μF unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VO
ΔVO
ΔVO
IQ
ΔIQ
ΔVO/ΔT
VN
RR
VD
ISC
IPK
Output Voltage
Line Regulation(3)
Load Regulation(3)
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Output Noise Voltage
Ripple Rejection
Dropout Voltage
Short Circuit Current
Peak Current
TJ = +25°C
IO = 5 mA to 350 mA,
VI = -14.5 V to -30 V
TJ =+25°C
VI = -14.5 V to -30 V
VI = -15 V to -25 V
TJ = +25°C IO = 5.0 mA to 500 mA
TJ = +25°C
IO = 5 mA to 350 mA
VI = -14.5 V to -30 V
IO = 5 mA
f = 10 Hz to 100 kHz, TA = +25°C
f = 120 Hz, VI = -15 V to -25 V
IO = 500 mA, TJ = +25°C
VI = -35 V, TJ = +25°C
TJ = +25°C
-11.5
-11.4
54
-12.0
-12.0
8.0
3.0
30
3
-0.8
75
60
1.1
140
650
-12.5
V
-12.6
80
mV
50
240 mV
6
mA
0.4
0.4
mA
mV/°C
μV
dB
V
mA
mA
Note:
3. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
© 2001 Fairchild Semiconductor Corporation
KA79MXX / LM79MXX Rev. 1.1.1
4
www.fairchildsemi.com
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