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SMP30(2004) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
SMP30
(Rev.:2004)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP30 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMP30
Figure 2: Pulse waveform
% I PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr
tp
t
Figure 3: Non repetitive surge peak on-state
current versus overload duration
ITSM(A)
25
20
15
10
5
0
1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
1E+2
1E+3
Figure 4: On-state voltage versus on-state
current (typical values)
Figure 5: Relative variation of holding current
versus junction temperature
IT(A)
50
20
10
5
Tj=25°C
2
VT(V)
1
0
1
2
3
4
5
6
7
8
9 10
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0
20
Tj(°C)
40
60
80 100 120
Figure 6: Relative variation of breakover
voltage versus junction temperature
Figure 7: Relative variation of leakage current
versus junction temperature (typical values)
VBO[Tj] / VBO[Tj=25°C]
1.10
IRM[Tj] / IRM[Tj=25°C]
2000
1000
VR=VRM
1.05
100
1.00 270 V
0.95
62 V
Tj(°C)
0.90
-40
-20
0
20
40
60
80
100
10
1
25
Tj(°C)
50
75
100
125
4/9

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