BAS16H Просмотр технического описания (PDF) - Philips Electronics
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BAS16H Datasheet PDF : 10 Pages
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Philips Semiconductors
BAS16H
High-speed switching diode in SOD123F package
300
IF
(mA)
200
mbg382
(1)
(2) (3)
10
IFSM
(A)
006aaa308
100
0
0
1
VF (V)
2
(1) Tamb = 150 °C; typical values
(2) Tamb = 25 °C; typical values
(3) Tamb = 25 °C; maximum values
Fig 1. Forward current as a function of forward
voltage
105
IR
(nA)
104
VR = 75 V
mga884
max
103
75 V
25 V
102
typ
typ
10
0
100
Tj (°C)
200
Fig 3. Reverse current as a function of junction
temperature
1
10−2
10−1
1
10
tp (ms)
Based on square wave currents
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration
0.8
Cd
(pF)
0.6
mbg446
0.4
0.2
0
0
4
8
12 VR (V) 16
f = 1 MHz; Tj = 25 °C
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
9397 750 14478
Product data sheet
Rev. 01 — 15 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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