IRF520A Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
IRF520A Datasheet PDF : 7 Pages
| |||
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 1 5 V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
@ Notes :
1. 250µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.4
0.3
VGS = 10 V
0.2
VGS = 20 V
0.1
@ Note : TJ = 25 oC
0.0
0
10
20
30
40
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
600
C iss
Ciss= Cgs+ Cgd ( Cds= shorted)
Coss= Cds+ Cgd
Crss= Cgd
400
C oss
200
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRF520A
Fig 2. Transfer Characteristics
101
175 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250µs Pulse Test
10-1
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 9.2 A
0
0
5
10
15
20
QG , Total Gate Charge [nC]
Share Link: 