MRF134 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MRF134 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS= 0, ID = 5.0 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VQS = 0)
Gate-Source Leakage Current (Vgs = 20 V,VDS= °)
ON CHARACTERISTICS
V(BR)DSS
!DSS
!GSS
Gate Threshold Voltage (!Q = 10 mA, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
vGS(th)
9fs
Input Capacitance
Cjss
(vDs =28 v. VGS = o, f = 1 .0 MHZ)
Output Capacitance
CQSS
(VDS =28 v- VGS = o, f = 1 .0 MHZ)
Reverse Transfer Capacitance
(VDS = 28 v, VGS = o, f = 1 .0 MHZ)
crss
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA)
f =150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)
Drain Efficiency (Fig. 1)
T!
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA)
Electrical Ruggedness (Fig. 1)
V
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA,
VSWR 30:1 at all Phase Angles)
Win
Typ
Max
Unit
65
—
—
Vdc
—
—
1.0
mAdc
—
—
1.0
u.Adc
1.0
3.5
6.0
Vdc
80
110
—
mmhos
—
7.0
—
PF
—
9.7
—
pF
—
2.3
—
PF
—
2.0
—
dB
dB
11
14
—
10.6
50
55
—
%
No Degradation in Output Power
R3*
R4
L4
x
'
v
'WV—
(-7
k
T° J"1-1
R2
^
L 3 ^ R5|
il
/-p C8 rr\9
n
C10
l
1
r -T*
C11
Tx
uu
1 i C™ 5 1?k C6 1 1 ^r-1
-L
C4 ,
t
•
<m
/^^v^^\
^J^
L2
/DC r>i ITHI IT
RF INPUT]s/
/^ylr* T•
C1
ly
~-YL1VV
1 M1 1 w!*n^
/ OUT
^
? fa
*Bias Adjust
C1.C4 —Arco406, 15-115 pF
C2 —Arco403, 3.0-35 pF
C3 —Arco402, 1.5-20pF
C5, C6, C7, C8, C12 — 0.1 nF Erie Redcap
C9 — 10 nF, 50V
C10, C11 —680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310" ID, #18 AWG Enamel, 0.2" Long
L2 — 3-1/2 Turns, 0.310" ID, #18 AWG Enamel, 0.25" Long
L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK-200 — 19/4B
R1 — 68 O, 1.0 W Thin Film
R2 — 10 kQ, 1/4 W
R3 — 10 Turns, 10 k£i Beckman Instruments 8108
R4 — 1.8kQ, 1/2 W
R5 — 1.0 M£J, 2.0 W Carbon
Board —G10,62 mils
Figure 1.150 MHz Test Circuit
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