13N60 Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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13N60 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
Fig.9 Breakdown voltage variation
vs. temperature
1.2
1.1
1.0
0.9
Notes:
1. VGS=0V
2. ID=1mA
0.8
-100 -50
0
50 100 150 200
Junction temperature, TJ (°C)
Fig.11 Maximum drain current vs.case
temperature
15
12
9
6
3
0
25
50
75
100
125
150
Case Temperature, TC (°C)
13N60 Series RRooHHSS
Nell High Power Products
Fig.10 On-resistance variation vs.
temperature
3.0
2.5
2.0
1.5
1.0
Notes:
0.5
1. VGS=10V
2. ID=6.5A
0.0
-100 -50
0
50 100 150 200
Drain-to-Source voltage, VDS (V)
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