13N60 Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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13N60 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
40
Top:
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
Bottom: 5.0V
3
0.6
Notes:
1. 250µs pulse test
2. TC = 25°C
1
10
20
Drain Source voltage, VDS (V)
13N60 Series RRooHHSS
Nell High Power Products
Fig.2 Transfer characteristics
60
10
150°C
25°C
1
0.2
2
4
-55°C
Notes:
1. VDS=20V
2. 250µs pulse width
6
8
Gate-Source voltage, VGS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
0.8
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
100
0.6
0.4
VGS=10V
VGS=20V
0.2
0
0
10
20
30
40
Drain current, lD (A)
Fig.5 Capacitance characteristics
50000
10000
1000
Ciss = Cgs +Cgd (Cds = shorted )
Coss = Cds +Cgs
Crss = Cgd
Ciss
100
Coss
10
1
0.1
Notes:
1. VGS=0V
2. f=1MHz
1
10
Crss
100
600
Drain-Source Voltage, VDS (V)
150°C
10
25°C
1
0.4
Notes:
1. VGS=0V
2. 250µs pulse Test
0.8
1.2
1.4
Source-Drain voltage, VSD (V)
Fig.6 Gate charge characteristics
10
VDS=120V
8
VDS=380V
VDS=480V
6
4
2
Notes:
1. lD=6.5A
0
0
10
20
30
40
Total gate charge ,QG (nC)
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