BAS221 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BAS221

General purpose diode

Philips Electronics 

Philips Semiconductors

General purpose diode

Product specification

BAS221

handbook1, 0ha2lfpage

IR

(µA)

10

(1)

(2)

1

MBG381

10 1

10 2

0

100

Tj (oC)

200

(1) VR = VRmax; maximum values.

(2) VR = VRmax; typical values.

Fig.5 Reverse current as a function of junction

temperature.

handbook1, .h0alfpage

Cd

(pF)

0.8

MBG447

0.6

0.4

0.2

0

2

4

6 VR (V) 8

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

RS = 50 Ω

V = VR IF x R S

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

R i = 50 Ω

VR

MGA881

tr

tp

10%

90%

input signal

t

IF

t rr

t

(1)

output signal

(1) IR = 3 mA.

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.

Oscilloscope: rise time tr = 0.35 ns.

Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance).

Fig.7 Reverse recovery time and waveforms.

1999 May 07

5

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