BAP50-03 Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP50-03 Datasheet PDF : 7 Pages
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NXP Semiconductors
BAP50-03
General purpose PIN diode
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
IF
forward current
Ptot
total power dissipation Tsp = 90 °C
Tstg
storage temperature
Tj
junction temperature
-
50
V
-
50
mA
-
500
mW
−65
+150
°C
−65
+150
°C
5. Thermal characteristics
Table 4.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
Unit
85
K/W
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
Conditions
IF = 50 mA
IR = 10 µA
VR = 50 V
f = 1 MHz; see Figure 1
VR = 0 V
VR = 1 V
VR = 5 V
f = 100 MHz; see Figure 2
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Min Typ Max Unit
-
0.95 1.1 V
50 -
-
V
-
-
100 nA
-
0.4 -
pF
-
0.3 0.55 pF
-
0.2 0.35 pF
[1] -
[1] -
[1] -
25
40
Ω
14
25
Ω
3
5
Ω
BAP50-03_4
Product data sheet
Rev. 04 — 11 September 2009
© NXP B.V. 2009. All rights reserved.
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