BAV70S Просмотр технического описания (PDF) - Philips Electronics
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BAV70S Datasheet PDF : 12 Pages
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Philips Semiconductors
High-speed double diode array
Product specification
BAV70S
102
IR
(µA)
10
1
VR = 75 V
max
75 V
MGA885
10 1
10 2
0
typ
typ
25 V
100
Tj ( o C)
200
Fig.5 Reverse current as a function of
junction temperature.
handbook0, .h8alfpage
Cd
(pF)
0.6
MBG446
0.4
0.2
0
0
4
8
12 VR (V) 16
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1997 Oct 21
5
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