BAV70S Просмотр технического описания (PDF) - Philips Electronics
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BAV70S Datasheet PDF : 12 Pages
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Philips Semiconductors
High-speed double diode array
Product specification
BAV70S
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode (a1)
anode (a2)
common cathode (k1)
anode (a3)
anode (a4)
common cathode (k2)
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
6 54
handbook, halfpage
654
DESCRIPTION
The BAV70S consists of two dual
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SMD SOT363 plastic
package.
12
Top view
3
MSA370
1
2
3 MGL160
Marking code: A4t.
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Ts = 60 °C; note 1
Note
1. One or more diodes loaded.
MIN. MAX. UNIT
−
85
V
−
75
V
−
250
mA
−
100
mA
−
450
mA
−
4
A
−
1
A
−
0.5
A
−
350
mW
−65
+150 °C
−65
+150 °C
1997 Oct 21
2
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