BFQ67 Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге

Компоненты Описание

производитель

BFQ67

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

Not for new design, this product will be obsoleted soon

BFQ67 / BFQ67R / BFQ67W

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• Small feedback capacitance

• Low noise figure

e3

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

1

SOT23

2

3

1

SOT23

Applications

Low noise small signal amplifiers up to 2 GHz. This

transistor has superior noise figure and associated

gain performance at UHF, VHF and microwave fre-

quencies.

3

2

1

SOT323

Mechanical Data

Typ: BFQ67

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: V2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFQ67R

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: R67

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFQ67W

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Marking: WV2

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

2

3

19150

Electrostatic sensitive device.

Observe precautions for handling.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Tamb ≤ 60 °C

Storage temperature range

Symbol

Value

Unit

VCBO

20

V

VCEO

10

V

VEBO

2.5

V

IC

50

mA

Ptot

200

mW

Tj

150

°C

Tstg

- 65 to + 150

°C

Document Number 85022

Rev. 1.6, 08-Sep-08

www.vishay.com

1

Share Link: