BFG540 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BFG540 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X;
BFG540/XR
handbook−,2h0alfpage
dim
(dB)
−30
MEA973
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
handbook−,2h0alfpage
d2
(dB)
−30
MEA972
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
handbook, h5alfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
0
1
Gass
MRA760
20
Gass
f = 900 MHz (dB)
15
1000 MHz
2000 MHz 10
5
Fmin
0
10
IC (mA)
−5
102
handbook, h5alfpage
Fmin
(dB)
4
IC = 10 mA
40 mA
Gass
MRA761
20
Gass
(dB)
15
3
10
2
5
40 mA
Fmin
10 mA
1
0
0
−5
102
103
104
f (MHz)
VCE = 8 V.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
VCE = 8 V.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
2000 May 23
7
Share Link: 