BFG540-X Просмотр технического описания (PDF) - Philips Electronics
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BFG540-X Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted in plastic
SOT143B and SOT143R packages.
PINNING
PIN
DESCRIPTION
BFG540 (Fig.1) Code: N37
1
collector
2
base
3
emitter
4
emitter
BFG540/X (Fig.1) Code: N43
1
collector
2
emitter
3
base
4
emitter
BFG540/XR (Fig.2) Code: N49
1
collector
2
emitter
3
base
4
emitter
Product specification
BFG540; BFG540/X;
BFG540/XR
handbook, 2 c4olumns
3
1
2
Top view
MSB014
Fig.1 SOT143B.
handbook, 2 co3lumns
4
2
1
Top view
MSB035
Fig.2 SOT143R.
2000 May 23
2
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